Semicon FDMC4435BZ FDMC4435BE-F126 Integrated Circuits Transistors MOSFET P-CH 8MLP
product properties
Part Status |
Active |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Material |
Si |
Configuration |
Single Quad Drain Triple Source |
Process Technology |
TMOS |
Channel Mode |
Enhancement |
Channel Type |
P |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
30 |
Maximum Gate Source Voltage (V) |
±25 |
Maximum Continuous Drain Current (A) |
8.5 |
Maximum Drain Source Resistance (MOhm) |
20@10V |
Typical Gate Charge @ Vgs (nC) |
33@10V|17@4.5V |







