Semicon Integrated Circuits Transistors FET MOSFETs single CSD25404Q3 8VSON
Product status
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Sale
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FET type
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P channel
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technology
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MOSFETs (Metal Oxides)
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Drain source voltage (Vdss)
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20 V
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Current at 25°C - Continuous Drain (Id)
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104A(Tc)
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Drive voltage (max Rds On, min Rds On)
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1.8V,4.5V
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On resistance (max) for different Ids and Vgs
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6.5 mOhm @ 10A, 4.5V
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Vgs(th) for different IDs (maximum)
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1.15V @ 250µA
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Gate charge (Qg) at different Vgs (max)
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14.1 nC @ 4.5 V
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Vgs (maximum)
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±12V
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Input capacitance (Ciss) for different Vds (max)
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2120 pF @ 10 V
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