CSD23202W10 SEMICON Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA
EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Configuration |
Single Dual Drain |
Process Technology |
NexFET |
Channel Mode |
Enhancement |
Channel Type |
P |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
12 |
Maximum Gate Source Voltage (V) |
6 |
Maximum Gate Threshold Voltage (V) |
0.9 |
Maximum Continuous Drain Current (A) |
2.2 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum IDSS (uA) |
1 |
Maximum Drain Source Resistance (mOhm) |
53@4.5V |
Typical Gate Charge @ Vgs (nC) |
2.9@4.5V |
Typical Input Capacitance @ Vds (pF) |
394@6V |
Maximum Power Dissipation (mW) |
1000 |
Typical Fall Time (ns) |
21 |
Typical Rise Time (ns) |
4 |
Typical Turn-Off Delay Time (ns) |
58 |
Typical Turn-On Delay Time (ns) |
9 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Packaging |
Tape and Reel |
Supplier Package |
DSBGA |
Pin Count |
4 |
Standard Package Name |
BGA |
Mounting |
Surface Mount |
Package Height |
0.28(Max) |
Package Length |
1 |
Package Width |
1 |
PCB changed |
4 |
Lead Shape |
Ball |
